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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK965R4-40E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33.9nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4483pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN3R9-25MLC,115
Nexperia USA Inc., N-Channel 25V 70A (Tc) 69W (Tc) Surface Mount LFPAK33,
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Toshiba Semiconductor and Storage, N-Channel 80V 18A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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PSMN012-60YS,115
Nexperia USA Inc., N-Channel 60V 59A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,
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TK90S06N1L,LQ
Toshiba Semiconductor and Storage, N-Channel 60V 90A (Ta) 157W (Tc) Surface Mount TO-252-3, U-MOSVIII-H
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STB32N65M5
STMicroelectronics, N-Channel 650V 24A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ V
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IXYS, N-Channel 850V 14A (Tc) 38W (Tc) Through Hole TO-220, HiPerFET™
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SIHB22N60ET1-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),
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TN2540N8-G
Microchip Technology, N-Channel 400V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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TN2130K1-G
Microchip Technology, N-Channel 300V 85mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
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IRF8302MTRPBF
Infineon Technologies, N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
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IRF40R207
Infineon Technologies, N-Channel 40V 56A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak), HEXFET®, StrongIRFET™
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IXTY08N100D2
IXYS, N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak),
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