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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK965R4-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33.9nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4483pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Toshiba Semiconductor and Storage, N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVII-H
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STMicroelectronics, N-Channel 600V 5A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™ II Plus
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STF21N90K5
STMicroelectronics, N-Channel 900V 18.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH5™
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STF10N65K3
STMicroelectronics, N-Channel 650V 10A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH3™
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BSS138BK,215
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
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FDMS86520
ON Semiconductor, N-Channel 60V 14A (Ta), 42A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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SI7636DP-T1-E3
Vishay Siliconix, N-Channel 30V 17A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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STD25NF20
STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™
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STD26NF10
STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
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IRF640NSTRLPBF
Infineon Technologies, N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK, HEXFET®
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SIHG47N60AE-GE3
Vishay Siliconix, N-Channel 600V 43A (Tc) 313W (Tc) Through Hole TO-247AC,
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