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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK966R5-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STP75NF75
STMicroelectronics, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
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SUM40012EL-GE3
Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
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NVMFS5C404NLAFT1G
ON Semiconductor, N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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RHP020N06T100
Rohm Semiconductor, N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3,
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IPD100N04S402ATMA1
Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
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IRFP3206PBF
Infineon Technologies, N-Channel 60V 120A (Tc) 280W (Tc) Through Hole TO-247AC, HEXFET®
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FDD86367-F085
ON Semiconductor, N-Channel 80V 100A (Tc) 227W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®
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FDMS86322
ON Semiconductor, N-Channel 80V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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FCP11N60F
ON Semiconductor, N-Channel 600V 11A (Tc) 125W (Tc) Through Hole TO-220-3, SuperFET™
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IRF3205PBF
Infineon Technologies, N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
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