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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH315N10F7-2,STH315N10F7-6
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
FET Feature -
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
STD6NK50ZT4
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SSM6K217FE,LF
Toshiba Semiconductor and Storage, N-Channel 40V 1.8A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVII-H
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Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB,
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IXYS, N-Channel 75V 400A (Tc) 1000W (Tc) Through Hole TO-247AD (IXFH), GigaMOS™, HiPerFET™, TrenchT2™
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SSM6K211FE,LF
Toshiba Semiconductor and Storage, N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSIII
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