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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH315N10F7-2,STH315N10F7-6
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
FET Feature -
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2PAK-6
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
FDD86369
ON Semiconductor, N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®
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DMN7022LFG-7
Diodes Incorporated, N-Channel 75V 7.8A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8,
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FCD620N60ZF
ON Semiconductor, N-Channel 600V 7.3A (Tc) 89W (Tc) Surface Mount DPAK, HiPerFET™, Polar™
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SI7450DP-T1-E3
Vishay Siliconix, N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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FCPF190N60E
ON Semiconductor, N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET® II
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IXFX64N60P3
IXYS, N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3, HiPerFET™, Polar3™
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SIR626LDP-T1-RE3
Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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APT18M100B
Microsemi Corporation, N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO-247 [B],
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PSMN2R6-60PSQ
Nexperia USA Inc., N-Channel 60V 150A (Tc) 326W (Tc) Through Hole TO-220AB,
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STW40N65M2
STMicroelectronics, N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ M2
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IXFN200N07
IXYS, N-Channel 70V 200A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™
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ATP405-TL-H
ON Semiconductor, N-Channel 100V 40A (Ta) 70W (Tc) Surface Mount ATPAK,
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