BUL1102E


BUL1102E

Part NumberBUL1102E

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BUL1102E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerSTMicroelectronics
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)450V
Vce Saturation (Max) @ Ib, Ic1.5V @ 400mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 2A, 5V
Power - Max70W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

BUL1102E - Related Products

More >>
BC847A,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount TO-236AB, View
FSB649 ON Semiconductor, Bipolar (BJT) Transistor NPN 25V 3A 150MHz 500mW Surface Mount SuperSOT-3, View
MMBT2369LT1G ON Semiconductor, Bipolar (BJT) Transistor NPN 15V 200mA 225mW Surface Mount SOT-23-3 (TO-236), View
FMMTL618TA Diodes Incorporated, Bipolar (BJT) Transistor NPN 20V 1.25A 195MHz 500mW Surface Mount SOT-23-3, View
MMBT5962 ON Semiconductor, Bipolar (BJT) Transistor NPN 45V 100mA 350mW Surface Mount SOT-23-3 (TO-236), View
BD809G ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220AB, View
FZT696BTA Diodes Incorporated, Bipolar (BJT) Transistor NPN 180V 500mA 70MHz 2W Surface Mount SOT-223, View
BU508AF STMicroelectronics, Bipolar (BJT) Transistor NPN 700V 8A 50W Through Hole ISOWATT-218FX, View
NSS60601MZ4T3G ON Semiconductor, Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223, View
BC549CTA ON Semiconductor, Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 500mW Through Hole TO-92-3, View
BC850B,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101 View
BD159STU ON Semiconductor, Bipolar (BJT) Transistor NPN 350V 500mA 20W Through Hole TO-126-3, View

BUL1102E - Tags

BUL1102E BUL1102E PDF BUL1102E datasheet BUL1102E specification BUL1102E image BUL1102E India Renesas Electronics India BUL1102E buy BUL1102E BUL1102E price BUL1102E distributor BUL1102E supplier BUL1102E wholesales