BUL216
BUL216
Part Number BUL216 Description TRANS NPN 800V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220AB
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BUL216 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BUL216 Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 3V @ 660mA, 2A Current - Collector Cutoff (Max) 250µA DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 400mA, 5V Power - Max 90W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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BCX55-16,135 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 60V 1A 180MHz 1.25W Surface Mount SOT-89,
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BCX56-TP Micro Commercial Co, Bipolar (BJT) Transistor NPN 80V 1A 130MHz 500mW Surface Mount SOT-89,
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2PD601BRL,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 50V 200mA 250MHz 250mW Surface Mount TO-236AB,
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TSC497CX RFG Taiwan Semiconductor Corporation, Bipolar (BJT) Transistor NPN 300V 500mA 75MHz 500mW Surface Mount SOT-23,
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STN0214 STMicroelectronics, Bipolar (BJT) Transistor NPN 1200V 200mA 1.6W Surface Mount SOT-223,
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TIP31C STMicroelectronics, Bipolar (BJT) Transistor NPN 100V 3A 2W Through Hole TO-220AB,
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2SD2014 Sanken, Bipolar (BJT) Transistor NPN - Darlington 80V 4A 75MHz 25W Through Hole TO-220F,
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NSV60601MZ4T3G ON Semiconductor, Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223,
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2SC4738-GR,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 100mW Surface Mount SSM,
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