BUL216
BUL216
Part Number BUL216 Description TRANS NPN 800V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 800V 4A 90W Through Hole TO-220AB
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BUL216 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BUL216 Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 800V Vce Saturation (Max) @ Ib, Ic 3V @ 660mA, 2A Current - Collector Cutoff (Max) 250µA DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 400mA, 5V Power - Max 90W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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BCP56-16,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 80V 1A 180MHz 960mW Surface Mount SC-73,
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2N3715 Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 60V 10A 4MHz 150W Through Hole TO-3,
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BC337-25-AP Micro Commercial Co, Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92,
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2SD1782KT146R Rohm Semiconductor, Bipolar (BJT) Transistor NPN 80V 500mA 120MHz 200mW Surface Mount SMT3,
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PBSS4350T,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount TO-236AB,
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