BUL654
BUL654
Part Number BUL654
Description TRANSISTOR HIGH VOLTAGE
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor NPN 400V 12A 80W Through Hole TO-220-3
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BUL654 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BUL654
Standard Package 50
Manufacturer STMicroelectronics
Series -
Packaging Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 12A
Voltage - Collector Emitter Breakdown (Max) 400V
Vce Saturation (Max) @ Ib, Ic 700mV @ 1.4A, 7A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 6A, 2V
Power - Max 80W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
MMBTA13LT3G
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ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 1.5W Surface Mount SOT-223-3,
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN - Darlington 60V 1A 200MHz 1.3W Surface Mount SOT-89,
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Nexperia USA Inc., Bipolar (BJT) Transistor NPN 32V 100mA 100MHz 250mW Surface Mount TO-236AB,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 200V 500mA 50MHz 350mW Surface Mount SOT-23-3,
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PMST3904,115
Nexperia USA Inc., Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SC-70,
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2SD2153T100V
Rohm Semiconductor, Bipolar (BJT) Transistor NPN 25V 2A 110MHz 2W Surface Mount MPT3,
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SMBTA42E6327HTSA1
Infineon Technologies, Bipolar (BJT) Transistor NPN 300V 500mA 70MHz 360mW Surface Mount SOT-23-3,
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