C2M0280120D
C2M0280120D
Part Number C2M0280120D Description MOSFET N-CH 1200V 10A TO-247-3 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3
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C2M0280120D - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet C2M0280120D Standard Package 30 Manufacturer Cree/Wolfspeed Series Z-FET™ Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ) Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 259pF @ 1000V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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