NTHL080N120SC1
NTHL080N120SC1
Part Number NTHL080N120SC1 Description SIC MOS TO247 80MW 1200V Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
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NTHL080N120SC1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet NTHL080N120SC1 Standard Package 450 Manufacturer ON Semiconductor Series - Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V Vgs (Max) +25V, -15V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V FET Feature - Power Dissipation (Max) 348W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 Variant
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