SCT2H12NZGC11
SCT2H12NZGC11
Part Number SCT2H12NZGC11 Description MOSFET N-CH 1700V 3.7A Package / Case TO-3PFM, SC-93-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM
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SCT2H12NZGC11 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT2H12NZ Standard Package 30 Manufacturer Rohm Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id 4V @ 900µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PFM Package / Case TO-3PFM, SC-93-3
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