Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SCT2H12NZ
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700V
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 18V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	184pF @ 800V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PFM
Package / Case	TO-3PFM, SC-93-3

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SCT2H12NZGC11

Part NumberSCT2H12NZGC11