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SCT2H12NZGC11


SCT2H12NZGC11

Part NumberSCT2H12NZGC11

Manufacturer

Description

Datasheet

Package / CaseTO-3PFM, SC-93-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SCT2H12NZGC11 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerRohm Semiconductor
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 18V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds184pF @ 800V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PFM
Package / CaseTO-3PFM, SC-93-3

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