CDBDSC5650-G
CDBDSC5650-G
Part Number CDBDSC5650-G
Description DIODE SILICON CARBIDE POWER SCHO
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description Diode Silicon Carbide Schottky 650V 21.5A (DC) Surface Mount D-PAK (TO-252)
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CDBDSC5650-G - Product Attributes
Categories
Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CDBDSC5650-G
Standard Package 80
Manufacturer Comchip Technology
Series -
Packaging Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 21.5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 100µA @ 650V
Capacitance @ Vr, F 424pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252)
Operating Temperature - Junction -55°C ~ 175°C
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