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CDBDSC5650-G

CDBDSC5650-G

Part NumberCDBDSC5650-G

ManufacturerComchip Technology

DescriptionDIODE SILICON CARBIDE POWER SCHO

DatasheetCDBDSC5650-G

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 21.5A (DC) Surface Mount D-PAK (TO-252)

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CDBDSC5650-G - Product Attributes

Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	CDBDSC5650-G
Standard Package	80
Manufacturer	Comchip Technology
Series	-
Packaging	Tube
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	21.5A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 5A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	100µA @ 650V
Capacitance @ Vr, F	424pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	D-PAK (TO-252)
Operating Temperature - Junction	-55°C ~ 175°C

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CDBDSC5650-G - Tags

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