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CDBJSC10650-G

CDBJSC10650-G

Part NumberCDBJSC10650-G

ManufacturerComchip Technology

DescriptionDIODE SILICON CARBIDE POWER SCHO

DatasheetCDBJSC10650-G

Package / CaseTO-220-2 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionDiode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220F

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CDBJSC10650-G - Product Attributes

Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	CDBJSC10650-G
Standard Package	50
Manufacturer	Comchip Technology
Series	-
Packaging	Tube
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	100µA @ 650V
Capacitance @ Vr, F	710pF @ 0V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Supplier Device Package	TO-220F
Operating Temperature - Junction	-55°C ~ 175°C

CDBJSC10650-G - Related Products

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CDBJSC10650-G - Tags

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