CDBJSC10650-G
CDBJSC10650-G
Part Number CDBJSC10650-G
Description DIODE SILICON CARBIDE POWER SCHO
Package / Case TO-220-2 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220F
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CDBJSC10650-G - Product Attributes
Categories
Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet CDBJSC10650-G
Standard Package 50
Manufacturer Comchip Technology
Series -
Packaging Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 10A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7V @ 10A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 100µA @ 650V
Capacitance @ Vr, F 710pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package TO-220F
Operating Temperature - Junction -55°C ~ 175°C
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