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CDM22010-650 SL

CDM22010-650 SL

Part NumberCDM22010-650 SL

ManufacturerCentral Semiconductor Corp

DescriptionMOSFET N-CH 10A 650V TO220

DatasheetCDM22010-650

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220

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CDM22010-650 SL - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CDM22010-650
Standard Package	50
Manufacturer	Central Semiconductor Corp
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	30V
Input Capacitance (Ciss) (Max) @ Vds	1168pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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