CSD17313Q2Q1

Part NumberCSD17313Q2Q1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD17313Q2Q1
Standard Package	3000
Manufacturer	Texas Instruments
Series	Automotive, AEC-Q100, NexFET™
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Rds On (Max) @ Id, Vgs	30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 4.5V
Vgs (Max)	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WSON (2x2)
Package / Case	6-WDFN Exposed Pad

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