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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQM120N02-1M3L
Standard Package 800
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 10V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI2102-TP
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IXYS Integrated Circuits Division, N-Channel 600V 1.8W (Ta) Surface Mount SOT-223,
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FDWS86068-F085
ON Semiconductor, N-Channel 100V 80A (Tc) 214W (Ta) Surface Mount 8-DFN (5.1x6.3), Automotive, AEC-Q101, PowerTrench®
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STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II
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ON Semiconductor, N-Channel 80V 6.7A (Ta), 21A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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STMicroelectronics, N-Channel 600V 8A (Tc) 70W (Tc) Surface Mount DPAK, FDmesh™ II
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Toshiba Semiconductor and Storage, N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSIX-H
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Vishay Siliconix, N-Channel 40V 62.5A (Ta), 100A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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Infineon Technologies, N-Channel 60V 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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BSP129H6327XTSA1
Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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IPN80R600P7ATMA1
Infineon Technologies, N-Channel 800V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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