CSD17327Q5A
CSD17327Q5A
Part Number CSD17327Q5A Description MOSFET N-CH 30V 65A 8SON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 65A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
To learn about the specification of CSD17327Q5A, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add CSD17327Q5A with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of CSD17327Q5A.
We are offering CSD17327Q5A for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
CSD17327Q5A - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD17327Q5A Standard Package 2500 Manufacturer Texas Instruments Series NexFET™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 8V Rds On (Max) @ Id, Vgs 12.2mOhm @ 11A, 8V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 506pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSONP (5x6) Package / Case 8-PowerTDFN
CSD17327Q5A - Related ProductsMore >>
TK9J90E,S1E Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N),
View
STD65N3LLH5 STMicroelectronics, N-Channel 30V 65A (Tc) 50W (Tc) Surface Mount DPAK, STripFET™ V
View
IXFN230N20T IXYS, N-Channel 200V 220A (Tc) 1090W (Tc) Chassis Mount SOT-227B, GigaMOS™
View
DMN62D0UW-7 Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
View
SPW20N60C3FKSA1 Infineon Technologies, N-Channel 650V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SISA14DN-T1-GE3 Vishay Siliconix, N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
BSS138-7-F Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
TK58E06N1,S1X Toshiba Semiconductor and Storage, N-Channel 60V 58A (Ta) 110W (Tc) Through Hole TO-220, U-MOSVIII-H
View
DMN62D1SFB-7B Diodes Incorporated, N-Channel 60V 410mA (Ta) 470mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
2N7002K-T1-GE3 Vishay Siliconix, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236, TrenchFET®
View
SIRA90DP-T1-RE3 Vishay Siliconix, N-Channel 30V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8,
View
SI7898DP-T1-E3 Vishay Siliconix, N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
CSD17327Q5A - Tags
English
