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CSD19506KTT


CSD19506KTT

Part NumberCSD19506KTT

Manufacturer

Description

Datasheet

Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD19506KTT - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs156nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12200pF @ 40V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDDPAK/TO-263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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