CSD19532KTTT

Part NumberCSD19532KTTT

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD19532KTT Datasheet
Standard Package	50
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5060pF @ 50V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DDPAK/TO-263-3
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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IPD30N03S2L20ATMA1	Infineon Technologies, N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™	View
SIR882DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
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TK14G65W,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK, DTMOSIV	View
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