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IRFH6200TRPBF


IRFH6200TRPBF

Part NumberIRFH6200TRPBF

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRFH6200TRPBF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesHEXFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds10890pF @ 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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