IRFH6200TRPBF
IRFH6200TRPBF
Part Number IRFH6200TRPBF Description MOSFET N-CH 20V 49A 8-PQFN Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)
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IRFH6200TRPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFH6200PBF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 49A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V Vgs(th) (Max) @ Id 1.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs 230nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 10890pF @ 10V FET Feature - Power Dissipation (Max) 3.6W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerVDFN
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