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IRFH6200TRPBF

IRFH6200TRPBF

Part NumberIRFH6200TRPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 20V 49A 8-PQFN

DatasheetIRFH6200PBF

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 49A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6)

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IRFH6200TRPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFH6200PBF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	230nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	10890pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN

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