CSD19535KTT
CSD19535KTT
Part Number CSD19535KTT Description MOSFET N-CH 100V 200A TO263 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3
To learn about the specification of CSD19535KTT, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add CSD19535KTT with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of CSD19535KTT.
We are offering CSD19535KTT for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
CSD19535KTT - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD19535KTT Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 200A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7930pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DDPAK/TO-263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
CSD19535KTT - Related ProductsMore >>
IPB107N20N3GATMA1 Infineon Technologies, N-Channel 200V 88A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
NVTFS5C466NLWFTAG ON Semiconductor, N-Channel 40V 51A (Tc) 38W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101
View
IRF740APBF Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-220AB,
View
STP8N120K5 STMicroelectronics, N-Channel 1200V 6A (Tc) 130W (Tc) Through Hole TO-220, MDmesh™ K5
View
BSC030N03MSGATMA1 Infineon Technologies, N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
DN2530N3-G Microchip Technology, N-Channel 300V 175mA (Tj) 740mW (Ta) Through Hole TO-92 (TO-226),
View
STB42N60M2-EP STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ M2-EP
View
DMN3067LW-7 Diodes Incorporated, N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-323,
View
IXFX210N30X3 IXYS, N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
View
FCA47N60F ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™
View
TSM4436CS RLG Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOP,
View
IRL2910STRLPBF Infineon Technologies, N-Channel 100V 55A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®
View
CSD19535KTT - Tags
English
