IPN60R3K4CEATMA1
IPN60R3K4CEATMA1
Part Number IPN60R3K4CEATMA1 Description MOSFET NCH 600V 2.6A SOT223 Package / Case SOT-223-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN60R3K4CEATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN60R3K4CE Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V FET Feature Super Junction Power Dissipation (Max) 5W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223 Package / Case SOT-223-3
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