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STP11N60DM2

STP11N60DM2

Part NumberSTP11N60DM2

ManufacturerSTMicroelectronics

DescriptionN-CHANNEL 600 V, 0.26 OHM TYP.,

DatasheetSTP11N60DM2 Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220

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STP11N60DM2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	STP11N60DM2 Datasheet
Standard Package	1000
Manufacturer	STMicroelectronics
Series	MDmesh™ DM2
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.5nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	614pF @ 100V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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