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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx041N12N3 G, IPB038N12N3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDS5670 ON Semiconductor, N-Channel 60V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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NDT014L ON Semiconductor, N-Channel 60V 2.8A (Ta) 3W (Ta) Surface Mount SOT-223-4,
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STB45NF06T4 STMicroelectronics, N-Channel 60V 38A (Tc) 80W (Tc) Surface Mount D2PAK, STripFET™ II
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IPI086N10N3GXKSA1 Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3, OptiMOS™
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PSMN025-80YLX Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,
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TPN22006NH,LQ Toshiba Semiconductor and Storage, N-Channel 60V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
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CSD17382F4 Texas Instruments, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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FCA47N60F ON Semiconductor, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-3PN, SuperFET™
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IXFP5N50P3 IXYS, N-Channel 500V 5A (Tc) 114W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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RE1C001UNTCL Rohm Semiconductor, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),
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IRFS7430TRLPBF Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™
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IPB048N15N5ATMA1 Infineon Technologies, N-Channel 150V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™
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