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CSD19536KTT

CSD19536KTT

Part NumberCSD19536KTT

ManufacturerTexas Instruments

DescriptionMOSFET N-CH 100V 200A TO263

DatasheetCSD19536KTT

Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3

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CSD19536KTT - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD19536KTT
Standard Package	1
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	153nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 50V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DDPAK/TO-263-3
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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