Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

SIJ482DP-T1-GE3

Part NumberSIJ482DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V 60A PPAK SO-8

DatasheetSIJ482DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIJ482DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIJ482DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIJ482DP-T1-GE3.
We are offering SIJ482DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIJ482DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIJ482DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2425pF @ 40V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 69.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIJ482DP-T1-GE3 - Related Products

	IXFH6N100	IXYS, N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	FDS5672	ON Semiconductor, N-Channel 60V 12A (Tc) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BUK9875-100A/CUX	Nexperia USA Inc., N-Channel 100V 7A (Tc) 8W (Tc) Surface Mount SC-73, TrenchMOS™	View
	NTMFS4C08NT1G	ON Semiconductor, N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	IXTT82N25P	IXYS, N-Channel 250V 82A (Tc) 500W (Tc) Surface Mount TO-268, PolarHT™	View
	DMT8012LFG-7	Diodes Incorporated, N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8,	View
	IPD80R2K8CEATMA1	Infineon Technologies, N-Channel 800V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3, CoolMOS™ CE	View
	STF12N120K5	STMicroelectronics, N-Channel 1200V 12A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ K5	View
	PSMN017-80PS,127	Nexperia USA Inc., N-Channel 80V 50A (Tc) 103W (Tc) Through Hole TO-220AB,	View
	SIA110DJ-T1-GE3	Vishay Siliconix, N-Channel 100V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen IV	View
	FDP24N40	ON Semiconductor, N-Channel 400V 24A (Tc) 227W (Tc) Through Hole TO-220-3, UniFET™	View
	SIR870ADP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIJ482DP-T1-GE3 - Tags

SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 PDF SIJ482DP-T1-GE3 datasheet SIJ482DP-T1-GE3 specification SIJ482DP-T1-GE3 image SIJ482DP-T1-GE3 India Renesas Electronics India SIJ482DP-T1-GE3 buy SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 price SIJ482DP-T1-GE3 distributor SIJ482DP-T1-GE3 supplier SIJ482DP-T1-GE3 wholesales