Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ CSD19538Q2T

CSD19538Q2T

CSD19538Q2T

Part NumberCSD19538Q2T

ManufacturerTexas Instruments

DescriptionMOSFET NCH 100V 13.1A 6WSON

DatasheetCSD19538Q2 Datasheet

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13.1A (Tc) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2)

To learn about the specification of CSD19538Q2T, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add CSD19538Q2T with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of CSD19538Q2T.
We are offering CSD19538Q2T for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

CSD19538Q2T - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD19538Q2 Datasheet
Standard Package	250
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	454pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 20.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WSON (2x2)
Package / Case	6-WDFN Exposed Pad

CSD19538Q2T - Related Products

	PMPB23XNEZ	Nexperia USA Inc., N-Channel 20V 7A (Ta) 1.7W (Ta) Surface Mount 6-DFN2020MD (2x2),	View
	IRF1010NPBF	Infineon Technologies, N-Channel 55V 85A (Tc) 180W (Tc) Through Hole TO-220AB, HEXFET®	View
	SIR626LDP-T1-RE3	Vishay Siliconix, N-Channel 60V 45.6A (Ta), 186A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SIRC06DP-T1-GE3	Vishay Siliconix, N-Channel 30V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	CSD18537NQ5AT	Texas Instruments, N-Channel 60V 50A (Ta) 3.2W (Ta), 75W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	TK42A12N1,S4X	Toshiba Semiconductor and Storage, N-Channel 120V 42A (Tc) 35W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	SI2312BDS-T1-GE3	Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	ZVN3306A	Diodes Incorporated, N-Channel 60V 270mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	IPP041N04NGXKSA1	Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	IRF840APBF	Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	FQP30N06L	ON Semiconductor, N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®	View
	SSM3K56MFV,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII-H	View

CSD19538Q2T - Tags

CSD19538Q2T CSD19538Q2T PDF CSD19538Q2T datasheet CSD19538Q2T specification CSD19538Q2T image CSD19538Q2T India Renesas Electronics India CSD19538Q2T buy CSD19538Q2T CSD19538Q2T price CSD19538Q2T distributor CSD19538Q2T supplier CSD19538Q2T wholesales