CSD25202W15
CSD25202W15
Part Number CSD25202W15 Description MOSFET P-CH 20V 4A 9DSBGA Package / Case 9-UFBGA, DSBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 4A (Ta) 500mW (Ta) Surface Mount 9-DSBGA
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CSD25202W15 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD25202W15 Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 26mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1.05V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Vgs (Max) -6V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 9-DSBGA Package / Case 9-UFBGA, DSBGA
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