CSD85312Q3E
CSD85312Q3E
Part Number CSD85312Q3E Description MOSFET 2N-CH 20V 39A 8VSON Package / Case 8-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) Common Source 20V 39A 2.5W Surface Mount 8-VSON (3.3x3.3)
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CSD85312Q3E - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet CSD85312Q3E Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) Common Source FET Feature Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 39A Rds On (Max) @ Id, Vgs 12.4mOhm @ 10A, 8V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V Power - Max 2.5W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package 8-VSON (3.3x3.3)
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