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CSD85312Q3E


CSD85312Q3E

Part NumberCSD85312Q3E

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD85312Q3E - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureLogic Level Gate, 5V Drive
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C39A
Rds On (Max) @ Id, Vgs12.4mOhm @ 10A, 8V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2390pF @ 10V
Power - Max2.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-VSON (3.3x3.3)

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