CXDM1002N TR
CXDM1002N TR
Part Number CXDM1002N TR Description MOSFET N-CH 100V 2A SOT-89 Package / Case TO-243AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 2A (Ta) 1.2W (Ta) Surface Mount SOT-89
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CXDM1002N TR - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CXDM1002N Standard Package 1 Manufacturer Central Semiconductor Corp Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 300mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 5V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V FET Feature - Power Dissipation (Max) 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89 Package / Case TO-243AA
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