SI8816EDB-T2-E1

Part NumberSI8816EDB-T2-E1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8816EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	109mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

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