SI8816EDB-T2-E1
SI8816EDB-T2-E1
Part Number SI8816EDB-T2-E1 Description MOSFET N-CH 30V MICRO FOOT Package / Case 4-XFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot
To learn about the specification of SI8816EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8816EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8816EDB-T2-E1.
We are offering SI8816EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI8816EDB-T2-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8816EDB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 109mOhm @ 1A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA
SI8816EDB-T2-E1 - Related ProductsMore >>
IRFU1N60APBF Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Through Hole TO-251AA,
View
PSMN8R5-100ESQ Nexperia USA Inc., N-Channel 100V 100A (Tj) 263W (Tc) Through Hole I2PAK,
View
IPD80R1K2P7ATMA1 Infineon Technologies, N-Channel 800V 4.5A (Tc) 37W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
IRFH5304TRPBF Infineon Technologies, N-Channel 30V 22A (Ta), 79A (Tc) 3.6W (Ta), 46W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
View
SI7858ADP-T1-GE3 Vishay Siliconix, N-Channel 12V 20A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STB26NM60N STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ II
View
STW10NK60Z STMicroelectronics, N-Channel 600V 10A (Tc) 156W (Tc) Through Hole TO-247-3, SuperMESH™
View
BSS138Q-7-F Diodes Incorporated, N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,
View
ZXM61N02FTA Diodes Incorporated, N-Channel 20V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
IRLR2905TRLPBF Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
View
BSC022N04LSATMA1 Infineon Technologies, N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
View
IPW65R041CFDFKSA1 Infineon Technologies, N-Channel 650V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SI8816EDB-T2-E1 - Tags
English
