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DMN1032UCB4-7

DMN1032UCB4-7

Part NumberDMN1032UCB4-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 12V 4.8A U-WLB1010-4

DatasheetDMN1032UCB4

Package / Case4-UFBGA, WLBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 12V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4

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DMN1032UCB4-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN1032UCB4
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-WLB1010-4
Package / Case	4-UFBGA, WLBGA

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