DMN1032UCB4-7

Part NumberDMN1032UCB4-7

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN1032UCB4
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 6V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-WLB1010-4
Package / Case	4-UFBGA, WLBGA

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TK32E12N1,S1X	Toshiba Semiconductor and Storage, N-Channel 120V 60A (Tc) 98W (Tc) Through Hole TO-220, U-MOSVIII-H	View
BUK763R4-30B,118	Nexperia USA Inc., N-Channel 30V 75A (Tc) 255W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
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BSS138K-13	Diodes Incorporated, N-Channel 50V 310mA (Ta) 380mW (Ta) Surface Mount SOT-23,	View
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BUK9Y19-100E,115	Nexperia USA Inc., N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View

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