DMN10H099SFG-7
DMN10H099SFG-7
Part Number DMN10H099SFG-7
Description MOSFET N-CH 100V 4.2A PWRDI3333
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8
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DMN10H099SFG-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN10H099SFG
Standard Package 2000
Manufacturer Diodes Incorporated
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V
FET Feature -
Power Dissipation (Max) 980mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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