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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK964R8-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 9710pF @ 25V
FET Feature -
Power Dissipation (Max) 234W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Diodes Incorporated, N-Channel 60V 5.3A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),
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STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, DeepGATE™, STripFET™ VI
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Toshiba Semiconductor and Storage, N-Channel 30V 47A (Tc) 1.6W (Ta), 44W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
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