IRFPS3810PBF

Part NumberIRFPS3810PBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFPS3810PbF
Standard Package	25
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	390nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6790pF @ 25V
FET Feature	-
Power Dissipation (Max)	580W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	SUPER-247™ (TO-274AA)
Package / Case	TO-274AA

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