Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ DMN2022UFDF-7

DMN2022UFDF-7

DMN2022UFDF-7

Part NumberDMN2022UFDF-7

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 20V 7.9A 6DFN

DatasheetDMN2022UFDF

Package / Case6-UDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount 6-UDFN2020 (2x2)

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DMN2022UFDF-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN2022UFDF
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	907pF @ 10V
FET Feature	-
Power Dissipation (Max)	660mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-UDFN2020 (2x2)
Package / Case	6-UDFN Exposed Pad

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