EMX2T2R
EMX2T2R
Part Number EMX2T2R Description TRANS 2NPN 50V 0.15A 6EMT Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 180MHz 150mW Surface Mount EMT6
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EMX2T2R - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet EMX2, UMX2N, IMX2 Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Power - Max 150mW Frequency - Transition 180MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package EMT6 Base Part Number *MX2
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ULQ2003A STMicroelectronics, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP,
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ULN2004AD16-U Diodes Incorporated, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-PDIP,
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ULN2001A STMicroelectronics, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Through Hole 16-DIP,
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