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EPC2101


EPC2101

Part NumberEPC2101

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Description

Datasheet

Package / CaseDie

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Detailed Description

EPC2101 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerEPC
SerieseGaN®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C9.5A, 38A
Rds On (Max) @ Id, Vgs11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 30V, 1200pF @ 30V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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EPC2101 - Tags

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