EPC2101ENGRT

Part NumberEPC2101ENGRT

ManufacturerEPC

DescriptionGAN TRANS ASYMMETRICAL HALF BRID

DatasheetEPC2101 Preliminary Datasheet

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die

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EPC2101ENGRT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2101 Preliminary Datasheet

Standard Package

Manufacturer

EPC

Series

eGaN®

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.5A, 38A

Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 30V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

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