EPC2106

Part NumberEPC2106

ManufacturerEPC

DescriptionGANFET TRANS SYM 100V BUMPED DIE

DatasheetEPC2106

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die

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EPC2106 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2106

Standard Package

2500

Manufacturer

EPC

Series

eGaN®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.7A

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 5V

Vgs(th) (Max) @ Id

2.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs

0.73nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 50V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

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