ES6U3T2CR
ES6U3T2CR
Part Number ES6U3T2CR Description MOSFET N-CH 30V 1.4A WEMT6 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6-WEMT
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ES6U3T2CR - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ES6U3T Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 240mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WEMT Package / Case SOT-563, SOT-666
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