FCP190N65S3


FCP190N65S3

Part NumberFCP190N65S3

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FCP190N65S3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package800
ManufacturerON Semiconductor
SeriesSuperFET® III
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 400V
FET Feature-
Power Dissipation (Max)144W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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