FDB2552
FDB2552
Part Number FDB2552 Description MOSFET N-CH 150V 37A TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 150V 5A (Ta), 37A (Tc) 150W (Tc) Surface Mount TO-263AB
To learn about the specification of FDB2552, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB2552 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB2552.
We are offering FDB2552 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDB2552 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB2552, FDP2552 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 5A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 36mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB031N08N5ATMA1 Infineon Technologies, N-Channel 80V 120A (Tc) 167W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
IRFZ34NSTRLPBF Infineon Technologies, N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK, HEXFET®
View
STF42N60M2-EP STMicroelectronics, N-Channel 600V 34A (Tc) 40W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
View
DMN10H170SFG-13 Diodes Incorporated, N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8,
View
IRFBE30PBF Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB,
View
DMN61D9UWQ-13 Diodes Incorporated, N-Channel 60V 400mA (Ta) 440mW (Ta) Surface Mount SOT-323,
View
TPW4R50ANH,L1Q Toshiba Semiconductor and Storage, N-Channel 100V 92A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H
View
STY50N105DK5 STMicroelectronics, N-Channel 1050V 44A (Tc) 625W (Tc) Through Hole MAX247™, SuperMESH5™
View
IPP60R090CFD7XKSA1 Infineon Technologies, N-Channel 600V 25A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
SI7454DDP-T1-GE3 Vishay Siliconix, N-Channel 100V 21A (Tc) 4.1W (Ta), 29.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IRFB11N50APBF Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB,
View
TSM4NB65CH C5G Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole TO-251 (IPAK),
View
FDB2552 - Tags
English
