FDC655BN
FDC655BN
Part Number FDC655BN Description MOSFET N-CH 30V 6.3A SSOT-6 Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 6.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
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FDC655BN - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDC655BN Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6
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STL11N65M5 STMicroelectronics, N-Channel 650V 8.5A (Tc) 70W (Tc) Surface Mount PowerFLAT™ (5x5), MDmesh™
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LND150N8-G Microchip Technology, N-Channel 500V 30mA (Tj) 1.6W (Ta) Surface Mount SOT-89-3,
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STD1NK80ZT4 STMicroelectronics, N-Channel 800V 1A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™
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NTD5C434NT4G ON Semiconductor, N-Channel 40V 33A (Ta), 160A (Tc) 4.7W (Ta), 120W (Tc) Surface Mount DPAK (SINGLE GAUGE),
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IPP60R180P7XKSA1 Infineon Technologies, N-Channel 650V 18A (Tc) 72W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
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IPD090N03LGATMA1 Infineon Technologies, N-Channel 30V 40A (Tc) 42W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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R6012FNJTL Rohm Semiconductor, N-Channel 600V 12A (Tc) 50W (Tc) Surface Mount LPTS (SC-83),
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FDC655BN - Tags
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