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FDB28N30TM

FDB28N30TM

Part NumberFDB28N30TM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 300V 28A D2PAK

DatasheetFDB28N30

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK

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FDB28N30TM - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB28N30
Standard Package	1
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	129mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 25V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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