Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS412DN-T1-GE3

SIS412DN-T1-GE3

SIS412DN-T1-GE3

Part NumberSIS412DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 12A 1212-8 PPAK

DatasheetSIS412DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS412DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS412DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS412DN-T1-GE3.
We are offering SIS412DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS412DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS412DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 15.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS412DN-T1-GE3 - Related Products

	IRL640STRLPBF	Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
	CSD17577Q3A	Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	AON6262E	Alpha & Omega Semiconductor Inc., N-Channel 60V 40A (Tc) 48W (Tc) Surface Mount 8-DFN (5x6), AlphaSGT™	View
	APT48M80L	Microsemi Corporation, N-Channel 800V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L],	View
	BSC110N15NS5ATMA1	Infineon Technologies, N-Channel 150V 76A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	DMN2450UFD-7	Diodes Incorporated, N-Channel 20V 900mA (Ta) 400mW (Ta) Surface Mount X1-DFN1212-3,	View
	R6020JNZC8	Rohm Semiconductor, N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-3PF,	View
	PSMN041-80YLX	Nexperia USA Inc., N-Channel 80V 25A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	TSM089N08LCR RLG	Taiwan Semiconductor Corporation, N-Channel 80V 67A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6),	View
	STP24NM60N	STMicroelectronics, N-Channel 600V 17A (Tc) 125W (Tc) Through Hole TO-220, MDmesh™ II	View
	CSD18532Q5BT	Texas Instruments, N-Channel 60V 100A (Ta) 3.2W (Ta), 156W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IXFA14N60P3	IXYS, N-Channel 600V 14A (Tc) 327W (Tc) Surface Mount TO-263 (IXFA), HiPerFET™, Polar3™	View

SIS412DN-T1-GE3 - Tags

SIS412DN-T1-GE3 SIS412DN-T1-GE3 PDF SIS412DN-T1-GE3 datasheet SIS412DN-T1-GE3 specification SIS412DN-T1-GE3 image SIS412DN-T1-GE3 India Renesas Electronics India SIS412DN-T1-GE3 buy SIS412DN-T1-GE3 SIS412DN-T1-GE3 price SIS412DN-T1-GE3 distributor SIS412DN-T1-GE3 supplier SIS412DN-T1-GE3 wholesales