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FDB86102LZ

FDB86102LZ

Part NumberFDB86102LZ

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 30A D2PAK

DatasheetFDB86102LZ

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB

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FDB86102LZ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB86102LZ
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1275pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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