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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB86566-F085 Datasheet
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6655pF @ 30V
FET Feature -
Power Dissipation (Max) 176W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIRC10DP-T1-GE3
Vishay Siliconix, N-Channel 30V 60A (Tc) 43W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SIHH100N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8,
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IRF2807STRLPBF
Infineon Technologies, N-Channel 75V 82A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
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IRFB3077PBF
Infineon Technologies, N-Channel 75V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
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NVMTS0D4N04CTXG
ON Semiconductor, N-Channel 40V 79.8A (Ta), 558A (Tc) 5W Surface Mount, Wettable Flank 8-DFNW (8.3x8.4), Automotive, AEC-Q101
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STW65N60DM6
STMicroelectronics, N-Channel 600V 38A Through Hole TO-247, MDmesh™ DM6
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IPB65R225C7ATMA2
Infineon Technologies, N-Channel 650V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7
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SIR462DP-T1-GE3
Vishay Siliconix, N-Channel 30V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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RQ3G100GNTB
Rohm Semiconductor, N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),
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PMV28UNEAR
Nexperia USA Inc., N-Channel 20V 4.7A (Ta) 510mW (Ta), 3.9W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
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BUK92150-55A,118
Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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APT44F80B2
Microsemi Corporation, N-Channel 800V 47A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2], POWER MOS 8™
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