FDC658AP
FDC658AP
Part Number FDC658AP Description MOSFET P-CH 30V 4A SSOT6 Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
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FDC658AP - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDC658AP Standard Package 3000 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 5V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 470pF @ 15V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SuperSOT™-6 Package / Case SOT-23-6 Thin, TSOT-23-6
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PMPB47XP,115 Nexperia USA Inc., P-Channel 30V 4A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,
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