NTHD4P02FT1G


NTHD4P02FT1G

Part NumberNTHD4P02FT1G

Manufacturer

Description

Datasheet

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

NTHD4P02FT1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs155mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.1W (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

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