FDC855N
FDC855N
Part Number FDC855N
Description MOSFET N-CH 30V 6.1A 6-SSOT
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
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FDC855N - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDC855N
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 655pF @ 15V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
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